AON4803 20v dual p-channel mosfet general description product summary v ds i d (at v gs =-4.5v) -3.4a r ds(on) (at v gs =-4.5v) < 90m w r ds(on) (at v gs =-2.5v) < 120m w r ds(on) (at v gs =-1.8v) < 165m w symbol v ds the AON4803 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -20v drain-source voltage -20 g2 s2 g1 s1 d2 d2 d1 d1 12 3 4 87 6 5 top view dfn 3x2a top view bottom view pin 1 g1 d1 s1 g2 d2 s2 v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl 1.7 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 28 110 35 maximum junction-to-ambient a units a i d -3.4 -2.7 -15 t a =25c t a =70c pulsed drain current c continuous drain current v v 8 gate-source voltage drain-source voltage -20 parameter typ max c/w r q ja 51 88 75 1.1 t a =70c junction and storage temperature range -55 to 150 c thermal characteristics power dissipation b p d t a =25c w rev 2: july 2012 www.aosmd.com page 1 of 5
AON4803 symbol min typ max units bv dss -20 v v ds =-20v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -0.4 -0.65 -1 v i d(on) -15 a 65 90 t j =125c 90 125 80 120 m w 100 165 m w g fs 12 s v sd -0.7 -1 v i s -2 a c iss 560 745 pf c oss 80 pf c rss 70 pf r g 15 23 w q g 6.1 8 nc q gs 0.6 nc q gd 1.6 nc t d(on) 10 ns t 12 ns reverse transfer capacitance v gs =0v, v ds =-10v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-4.5v, i d =-3.4a forward transconductance diode forward voltage i s =-1a,v gs =0v v ds =-5v, i d =-3.4a v gs =-1.8v, i d =-1.5a v gs =-2.5v, i d =-2.5a r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =-250 m a v ds =0v, v gs =8v zero gate voltage drain current gate-body leakage current m w gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =-4.5v, v ds =-10v, i d =-3.4a gate source charge gate drain charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =-4.5v, v =-10v, r =2.9 w , t r 12 ns t d(off) 44 ns t f 22 ns t rr 21 ns q rr 7.5 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =-3.4a, di/dt=100a/ m s body diode reverse recovery time turn-off fall time body diode reverse recovery charge i f =-3.4a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =-4.5v, v ds =-10v, r l =2.9 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 2: july 2012 www.aosmd.com page 2 of 5
AON4803 typical electrical and thermal characteristics 17 52 10 0 18 0 5 10 15 20 0 1 2 3 4 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 40 50 60 70 80 90 0 2 4 6 8 10 r ds(on) (m w ww w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-1.8v i d =-1.5a v gs =-2.5v i d =-2.5a v gs =-4.5v i d =-3.4a 25 c 125 c v ds =-5v v gs =-2.5v v gs =-4.5v 0 5 10 15 20 25 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-1.5v -2.0v -4.5v -2.5v -3.0v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 20 60 100 140 180 0 2 4 6 8 10 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-3.4a 25 c 125 c rev 2: july 2012 www.aosmd.com page 3 of 5
AON4803 typical electrical and thermal characteristics 0 1 2 3 4 5 0 2 4 6 8 10 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-10v i d =-3.4a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms ambient (note f) figure 9: maximum forward biased safe operating area (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =110 c/w rev 2: july 2012 www.aosmd.com page 4 of 5
AON4803 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdd vgs vgs rg dut vdc vgs id vgs - + i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i rev 2: july 2012 www.aosmd.com page 5 of 5
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